Post-Doctoral Researcher: Monolithic III-V Lasers on Si for SWIR Sensing Applications
2 dagen geleden

What you will do

Tunable laser diode absorption spectroscopy (TDLAS) in the short-wave infrared (SWIR) wavelength region (1.4-3.0um) has recently attracted growing interest, owing to its potential for highly sensitive and highly selective chemical sensing in industrial, automotive, and life science applications.

However, the relatively high cost of currently available TDLAS solutions prevents the widespread adoption of this technology into cost-sensitive, high-volume markets.

To enable ultra-low-cost SWIR sensing applications, imec is currently extending its silicon photonics platform with optical gain elements (lasers) using wafer-scale high-quality III-V epitaxial growth on Si through aspect-ratio trapping and nano-ridge engineering.

Previously, imec demonstrated optically pumped laser devices and high-performance photodetectors using this approach, and we are currently working towards electrically driven lasers for datacom applications, emitting at 1310nm.

As a post-doctoral researcher, you will extend this work by contributing to the development of SWIR tunable diode lasers in imec’s emerging on III-V / Si photonics platform.

More specifically, you will be responsible to drive the early pathfinding work to identify and develop optimized device and material stack concepts to realize efficient, electrically pumped lasers emitting in the 1.

4-3.0um wavelength range. Working closely with imec’s experts in III-V epitaxial growth, you will design and evaluate the potential of InGaAs, InP and / or GaSb laser structures grown directly on Si, through rigorous optical modeling and characterization.

Subsequently, you will layout the most promising laser diode designs in a test mask and have it submitted for fabrication in imec’s 300mm CMOS pilot line.

Finally, you will carry out in-depth functional characterization of the developed laser diodes.


  • Monolithic III-V on Si material / device characterization and analysis : micro-PL, EL, LIV, etc.
  • Monolithic III-V on Si laser (electro-optical) modeling, design and layout : Synopsys - Sentaurus, Lumerical, IPKiss, etc.
  • Lab and clean-room device fabrication.
  • Reporting to internal and external stakeholders.
  • Reporting to the scientific community at conferences or in scientific journals.
  • What we do for you

    We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium.

    With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.

    We are and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility.

    We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.

    academy, 'our corporate university', we actively invest in your development to further your technical and personal growth.

    We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a competitive salary with many fringe benefits.

    Who you are

    The ideal candidate has / is :

  • Obtained a Ph.D. of Science in Electrical Engineering or Engineering Physics
  • 2+ years hands-on experience in characterization of III-V semiconductor optoelectronic devices
  • 3+ years hands-on experience in simulation / design of III-V semiconductor optoelectronic devices
  • 1+ years hands-on experience in clean-room fabrication (of photonic devices)
  • Experience with integrated (silicon) photonics is a plus.
  • An enthusiastic team player, yet able to independently solve complex problems with limited supervision.
  • Excellent English communication skills and willing to work in a multicultural environment.
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